2.0-18.0 ghz gaas mmic low noise amplifier page 1 of 6 features self bias architecture 18.0 db small signal gain 3.5 db noise figure +11.0 dbm p1db compression point 100% visual inspection to mil-std-883 method 2010 general description parameter units ghz db db db db db db dbm dbm dbm vdc ma min. 2.0 - - - - - - - - - +4.5 90 typ. - 10.0 15.0 18.0 +/-1.0 40.0 3.5 +16.0 +41.0 +25.0 +5.0 105 max. 18.0 - - - - - - - - - +7.0 120 supply voltage (vd) supply current (id) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +8.0 vdc 180 ma +10 dbm -65 to +165 o c -55 to mttf table mttf table chip device layout (1) channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. 1 1 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. mimix broadband?s two stage 2.0-18.0 ghz gaas mmic low noise amplifier has a small signal gain of 18.0 db with a noise figure of 3.5 db across the band. this mmic uses mimix broadband?s 0.3 m gaas phemt device model technology, and is based upon optical lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and vsat applications. electrical characteristics (ambient temperature t = 25 o c) absolute maximum ratings frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure (nf) output power for 1 db compression (p1db) output second order intercept point (oip2) output third order intercept point (oip3) drain bias voltage (vd1,2) supply current (id) (vd1,2=5.0v) CMM1100 may 2006 - rev 01-may-06 100% on-wafer dc testing and 100% rf wafer qualification. wafer qualification includes sample testing from each quadrant with an 80% pass rate required.
page 2 of 6 low noise amplifier measurements 2.0-18.0 ghz gaas mmic low noise amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CMM1100 may 2006 - rev 01-may-06 CMM1100 vd=5.0 v id=110 ma 12 13 14 15 16 17 18 19 20 21 22 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 frequency (ghz) gain (db) CMM1100 vd=5.0 v id=105 ma 0.0 1.0 2.0 3.0 4.0 5.0 6.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 frequency (ghz) noise figure (db) CMM1100 vd=5.0 v id=110 ma -30 -25 -20 -15 -10 -5 0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 frequency (ghz) input return loss (db) CMM1100 vd=5.0 v id=110 ma -30 -25 -20 -15 -10 -5 0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 frequency (ghz) output return loss (db) CMM1100 vd=5.0 v id=115 ma several devices over multiple wafers 10 11 12 13 14 15 16 17 18 19 20 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 frequency (ghz) output power p1db (dbm)
page 3 of 6 s-parameters 2.0-18.0 ghz gaas mmic low noise amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CMM1100 may 2006 - rev 01-may-06 typcial s-parameter data for CMM1100 v d=5.0 v id=110 m a frequenc y s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.1 0.989 -32.89 0.002 -72.42 0.001 2.94 0.996 -14.02 0.5 0.839 -138.78 0.063 -3.31 0.002 84.86 0.936 -70.70 1.0 0.430 96.36 4.612 -156.47 0.007 -89.29 0.533 -150.27 2.0 0.079 -79.78 7.309 54.69 0.001 93.66 0.235 173.76 3.0 0.117 -123.97 7.967 -13.21 0.002 95.25 0.111 166.37 4.0 0.146 -120.27 7.957 -61.49 0.003 57.01 0.093 -178.76 5.0 0.198 -119.04 7.774 -101.59 0.004 26.90 0.110 -173.73 6.0 0.257 -127.62 7.527 -137.51 0.004 3.56 0.127 179.58 7.0 0.292 -138.75 7.397 -169.02 0.005 -21.72 0.135 162.34 8.0 0.307 -147.41 7.406 159.75 0.006 -40.36 0.125 144.68 9.0 0.308 -154.14 7.525 128.76 0.006 -62.38 0.103 122.29 10.0 0.312 -158.91 7.689 97.15 0.006 -83.34 0.070 94.80 11.0 0.318 -163.15 7.783 64.72 0.007 -104.97 0.037 42.36 12.0 0.333 -171.93 7.765 32.07 0.008 -125.80 0.037 -40.62 13.0 0.328 178.87 7.672 0.03 0.008 -149.13 0.061 -90.19 14.0 0.300 161.11 7.740 -31.97 0.009 -169.78 0.078 -114.06 15.0 0.277 142.05 7.945 -64.56 0.009 170.64 0.081 -134.69 16.0 0.184 112.04 8.293 -100.09 0.010 149.19 0.081 -148.84 17.0 0.158 55.01 8.667 -138.53 0.010 122.11 0.072 -162.15 18.0 0.191 8.33 8.929 178.72 0.011 93.61 0.054 164.21 19.0 0.341 -26.19 8.632 129.48 0.011 56.71 0.042 62.03 20.0 0.525 -54.25 7.041 76.86 0.010 15.10 0.116 -24.48 21.0 0.631 -81.75 4.883 29.71 0.009 -25.82 0.179 -69.96 22.0 0.648 -98.09 3.473 -12.54 0.008 -62.11 0.195 -99.10 23.0 0.680 -107.84 2.454 -59.85 0.008 -95.55 0.175 -122.33 24.0 0.785 -119.97 1.265 -113.21 0.006 -142.49 0.151 -130.57 25.0 0.783 -140.30 0.532 -141.73 0.005 -167.88 0.121 -132.85 26.0 0.570 -165.99 0.214 -149.82 0.003 145.82 0.113 -134.43 27.0 0.300 -94.21 0.223 -152.16 0.001 -153.86 0.105 -133.33 28.0 0.727 -114.15 0.140 170.89 0.003 176.63 0.087 -129.04 29.0 0.819 -131.21 0.074 153.50 0.004 155.26 0.078 -116.79 30.0 0.850 -142.42 0.043 147.08 0.003 151.90 0.090 -96.48
page 4 of 6 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is m425) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.076 +/- 0.010 (0.003 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads are 0.080 x 0.080 (0.003 x 0.003). all rf bond pads are 0.180 x 0.080 (0.007 x 0.003). bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 1.538 mg bond pad #1 (rf in) bond pad #2 (vg1a) bond pad #3 (vg1b) bond pad #4 (vd1) bond pad #5 (vd2) bond pad #6 (rf out) 2.0-18.0 ghz gaas mmic low noise amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CMM1100 may 2006 - rev 01-may-06 6 1 7 1.550 (0.061) 0.418 (0.017) 2 1.460 (0.058) 0.0 0.0 1.600 (0.063) 1.480 (0.058) 8 1.360 (0.054) 9 1.245 (0.049) 10 0.714 (0.028) 11 0.599 (0.024) 12 0.484 (0.019) 3 0.215 (0.009) 4 0.843 (0.033) 5 1.508 (0.059) 0.418 (0.017) bond pad #7 (rs2-9.0 ) bond pad #8 (rs2-12.5 ) bond pad #9 (rs2-12.5 ) bond pad #10 (rs1-29.0 ) bond pad #11 (rs1-29.0 ) bond pad #12 (rs1-16.6 ) 6 1 7 2 8 9 10 11 12 3 4 5 vd1,2 rf in rf out
page 5 of 6 app note [1] biasing - as shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain bias. bias is nominally vd1=vd2=5v, i total =105ma. additionally there are six total source resistors on chip. the three resistors on the input stage are 16.6, 29.0 and 29.0 ohms. the three resistors on the output stage are 12.5, 12.5 and 9.0 ohms. one of these must be b onded to ground for each amplifier stage to achieve performance as shown. bonding to one of the other resistors or any or all in paralle l may allow additional performance adjustment. lastly for additional stability pad #3 can be grounded instead of bond pad #2. app note [2] bias arrangement - each dc pad (vd) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is also recommended. device schematic 2.0-18.0 ghz gaas mmic low noise amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CMM1100 may 2006 - rev 01-may-06 backplate temperature 55 deg celsius 75 deg celsius 95 deg celsius channel temperature deg celsius deg celsius deg celsius fits e+ e+ e+ mttf hours e+ e+ e+ rth c/w c/w c/w bias conditions: vd1,2=5.0v, i total =105 ma these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. mttf table (tbd) (thermal resistance (rth) is 60.0oc/w)
page 6 of 6 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: do not ingest. do not alter the form of this product into a gas , powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom c onditions at an appropriately grounded antistatic work- station. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.076 mm (0.003") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxy is tanaka ts3332ld cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280o c (note: gold germanium should be avoided). the work station temperature should be 310oc +/- 10oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. 2.0-18.0 ghz gaas mmic low noise amplifier mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2006 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. CMM1100 may 2006 - rev 01-may-06 part number for ordering description CMM1100-bd rohs compliant die packed in gel paks pb-CMM1100-bd CMM1100-bd evaluation module
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